28 May 2004 Superluminescent diode at 1.55 um with a bent absorbing guide structure
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Abstract
An InGaAsP/InP superluminescent diode (SLD) emitting at 1.55 um has been fabricated by the metal organic vapor deposition (MOCVD) and liquid phase epitaxy (LPE) equipments. Lasing is effectively suppressed by incorporating a bent absorbing guide structure for SLD operation. The fabricated SLD has an optical power of 4mW at an injection current of 200 mA. The spectral width of the SLD is 40 nm at the same current.
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Jeong-Ho Kim, Jeong-Ho Kim, Se-Kyung An, Se-Kyung An, Dong-Won Kim, Dong-Won Kim, Jae-Hwan You, Jae-Hwan You, In-Sik Jung, In-Sik Jung, Mi-Suk Choi, Mi-Suk Choi, Young-Kyu Choi, Young-Kyu Choi, Tchang-Hee Hong, Tchang-Hee Hong, } "Superluminescent diode at 1.55 um with a bent absorbing guide structure", Proc. SPIE 5355, Integrated Optics: Devices, Materials, and Technologies VIII, (28 May 2004); doi: 10.1117/12.530626; https://doi.org/10.1117/12.530626
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