14 June 2004 Design and experimental results of small silicon-based optical modulators
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Abstract
In silicon based photonic circuits, optical modulation is usually performed via the plasma dispersion effect or via the thermo-optic effect, both of which are relatively slow processes. Until relatively recently, the majority of the work in Silicon-on-Insulator (SOI) was based upon waveguides with cross sectional dimensions of several microns. This limits the speed of devices based on the plasma dispersion effect due to the finite transit time of charge carriers, and on the thermo-optic effect due to the volume of the silicon device. Consequently moving to smaller dimensions will increase device speed, as well as providing other advantages of closer packing density, smaller bend radius, and cost effective fabrication. As a result, the trend in recent years has been a move to smaller waveguides, of the order of 1 micron in cross sectional dimensions. In this paper we discuss both the design of small waveguide modulators (of the order of ~1 micron) together with a presentation of preliminary experimental results. In particular two approaches to modulation are discussed, based on injection of free carriers via a p-i-n device, and via thermal modulation of a ring resonator.
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Ching Eng Png, Graham T. Reed, William Robert Headley, Kevin P. Homewood, Ansheng Liu, Mario J. Paniccia, Ragheid M.H. Atta, Graham J. Ensell, Alan G.R. Evans, D. Hak, Oded Cohen, "Design and experimental results of small silicon-based optical modulators", Proc. SPIE 5356, Optoelectronic Integrated Circuits VI, (14 June 2004); doi: 10.1117/12.529385; https://doi.org/10.1117/12.529385
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