1 July 2004 Light emission from 1D silicon photonic crystals containing erbium
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We describe a new method for doping high-quality porous silicon microcavities with erbium using ion implantation, where the erbium is confined to the spacer layer of the structure. This method involves fabricating porous silicon microcavities from a crystalline silicon wafer that has been implanted with erbium to a depth that coincides with a spacer layer of the microcavity. Using this technique erbium doped microcavities with Q-factors in excess of 1500 have been demonstrated. From low temperature photoluminescence measurements we observe a strong modification of the spontaneous emission spectrum of the erbium doped PSi, where the emission is enhanced 25 times at the resonance and suppressed elsewhere. Temperature dependent photoluminescence exhibited strong thermal quenching and excitation power dependent photoluminescence measurement showed saturation at high excitation powers. Both of these trends are characteristically similar to luminescent erbium centres in crystalline silicon. In addition we discuss the merits of localising the erbium in the crystalline part of the PSi and its potential for reducing the effects of Auger recombination and energy back-transfer, which limit the performance of the structures at room high temperatures.
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Peter J. Reece, Michael Gal, Gilles Lerondel, H. Hoe Tan, and Chenupati Jagadish "Light emission from 1D silicon photonic crystals containing erbium", Proc. SPIE 5357, Optoelectronic Integration on Silicon, (1 July 2004); doi: 10.1117/12.525966; https://doi.org/10.1117/12.525966

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