1 July 2004 Optical interconnects in commercial BiCMOS
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Abstract
In this work, we demonstrated a practical means to construct wafer-level optical interconnects in commercial BiCMOS electronics. Through modifying the layout and design of commercially available SiGe Heterojunction Bipolar Transistors (HBT) through MOSISTM foundry, we obtained high performance SiGe Heterojunction Phototransistors (HPT) that utilize the SiGe Base and Collector junction for photo-detection and the transistor action for the amplified photocurrent. Responsivities of 2.4A/W and 0.2A/W were achieved for the phototransistor detecting light of 850nm and 1060nm, respectively. The external quantum efficiency of 350% was obtained. The photocurrent gain was shown to be 78. Furthermore, we investigated the integration of optical waveguides and elements with the SiGe commercial platform to demonstrate an effective approach of the wafer-level optical interconnects. The leaky-mode waveguide routed on the chip surface can couple the light laterally from the input fiber to the buried photodetection region. A 20% coupling efficiency is obtained in the SiGe layer, and provides a response about 40 times higher than that of the vertical illumination. The integrated on-chip waveguides and photodetectors in the commercial platform offer efficient optical-to-electrical conversion and a low-loss routing scheme useful for on-chip computational architectures.
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Tao Yin, Alyssa Apsel, Anand Mohan Pappu, Chak Reungsinpinya, Aaditya Khimani, "Optical interconnects in commercial BiCMOS", Proc. SPIE 5357, Optoelectronic Integration on Silicon, (1 July 2004); doi: 10.1117/12.529351; https://doi.org/10.1117/12.529351
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