Paper
6 July 2004 High-quantum-efficiency solar-blind photodetectors
Ryan McClintock, Alireza Yasan, Kathryn Alissa Mayes, Derek James Shiell, Shaban Ramezani Darvish, Patrick Kung, Manijeh Razeghi
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Abstract
We report AlGaN-based back-illuminated solar-blind p-i-n photodetectors with a record peak responsivity of 150 mA/W at 280 nm, corresponding to a high external quantum efficiency of 68%, increasing to 74% under 5 volts reverse bias. Through optimization of the p-AlGaN layer, we were able to remove the out-of-band negative photoresponse originating from the Schottky-like p-type metal contact, and hence significantly improve the degree of solar-blindness. We attribute the high efficiency of these devices to the use of very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material, a highly conductive Si-In co-doped Al0.5Ga0.5N layer, and the elimination of the negative photoresponse through improvement of the p-type AlGaN.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryan McClintock, Alireza Yasan, Kathryn Alissa Mayes, Derek James Shiell, Shaban Ramezani Darvish, Patrick Kung, and Manijeh Razeghi "High-quantum-efficiency solar-blind photodetectors", Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); https://doi.org/10.1117/12.529348
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Cited by 16 scholarly publications.
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KEYWORDS
Aluminum

Gallium

Photodetectors

Back illuminated sensors

Magnesium

External quantum efficiency

Ultraviolet radiation

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