6 July 2004 Nitrogen doping and p-type conductivity of ZnO films grown by vapor phase epitaxy
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Proceedings Volume 5359, Quantum Sensing and Nanophotonic Devices; (2004); doi: 10.1117/12.517233
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States
Abstract
The incorporation and electrical activity of nitrogen as an acceptor in ZnO has been investigated. Low temperature Metalorganic Vapor Phase Epitaxy (MOVPE) growth, using diallylamine as nitrogen precursor, yields to incorporation of nitrogen in the range 1016-1021 cm-3. The electrical activity of nitrogen is demonstrated through the increased compensation of the natural donors with doping level. Close Space Vapor transport (CSVT) and Chemical Vapor Transport (CVT) are found to be less efficient for nitrogen incorporation. This suggests that the use of high temperature growth is a limiting factor for nitrogen incorporation in ZnO. Ex-situ techniques have been tried for both electrical activation and nitrogen incorporation in ZnO. High pressure annealing under oxygen pressure shows a conversion to p-type on nitrogen doped samples grown by MOVPE. Finally, diffusion of nitrogen was carried out on undoped MOVPE layers under high pressure conditions stemming from the decomposition of NH4NO3. Conversion to p-type conductivity was observed in a systematic way with measured hole concentrations up to 6.5.1017 cm-3. These results suggest that ex-situ treatment can be a practical way to realize p-type ZnO layers.
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Jean-Francois Rommeluere, L. Svob, J. Mimila-Arroyo, S. A. Said Hassani, F. Jomard, G. Amiri, A. Lusson, V. Sallet, Pierre Galtier, Y. Marfaing, "Nitrogen doping and p-type conductivity of ZnO films grown by vapor phase epitaxy", Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); doi: 10.1117/12.517233; https://doi.org/10.1117/12.517233
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KEYWORDS
Nitrogen

Zinc oxide

Doping

Annealing

Oxygen

Temperature metrology

Vapor phase epitaxy

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