Optoelectronic investigation of novel PbSrSe thin films for mid-infrared device applications

Wen Zhong Shen

doi:10.1117/12.522914

6 July 2004 Optoelectronic investigation of novel PbSrSe thin films for mid-infrared device applications

Wen Zhong Shen

Proceedings Volume 5359, Quantum Sensing and Nanophotonic Devices; (2004) https://doi.org/10.1117/12.522914
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We review our recently combined study of temperature-dependent photoluminescence, absorption, and photocurrent measurements with theoretical models on PbSrSe thin films grown by molecular beam epitaxy for the key properties of PbSrSe thin films and their microstructures. The derived empirical equations for band gaps, effective masses, and refractive indices have been employed successfully in PbSrSe/PbSe multiple quantum well (MQW) mid-infrared laser systems, which opens the way for the design of IV-VI MQW mid-infrared lasers. The infrared detection of PbSrSe thin films has been demonstrated at different temperatures, where the spectral intensity and wavelength coverage are determined by the band gap and the film thickness. The bias- and frequency-dependent capacitance characteristics have also been investigated in detail.

Citation Download Citation

Wen Zhong Shen "Optoelectronic investigation of novel PbSrSe thin films for mid-infrared device applications", Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); https://doi.org/10.1117/12.522914

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