14 June 2004 Growth of self-assembled InAs quantum dots for InP-based heterostructures
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Abstract
There has been great technological interest in the use of InAs quantum dots for InP-based lasers which can provide long wavelength emission in the 1.55-2 μm range. The atom-like densities of states of quantum dots provide low threshold current density, high differential gain, temperature insensitive operation and low chirp. However, to take advantage of these aspects, it is important to have dots with uniform size and shape. We report the atomic force microscope (AFM) and photoluminescence (PL) studies of self organized InAs quantum dots grown by molecular beam epitaxy on InGaAs and InAlAs lattice matched to InP. Our experiments confirm prior results that InAs forms quantum wires on InGaAs matrix layer. However, we find that depositing a thin buffer layer of InAlAs helps in the formation of well-shaped quantum dots. We believe that the aluminum in the buffer layer reduces the surface diffusion of indium adatoms and aids the formation of dots with high density. Our results show that formation of quantum dots depends strongly on the strain, surface energy and surface diffusion kinetics that are in turn dependent on the nature of buffer layer and growth conditions. We improve the quality of dots by optimizing the growth parameters such as growth temperature and arsenic overpressure.
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Deepa Gazula, Manhong Zhang, Dennis G. Deppe, "Growth of self-assembled InAs quantum dots for InP-based heterostructures", Proc. SPIE 5361, Quantum Dots, Nanoparticles, and Nanoclusters, (14 June 2004); doi: 10.1117/12.537769; https://doi.org/10.1117/12.537769
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