Synthesis and properties of Si and SiGe/Si nanowires

Joan M. Redwing; Kok-Keong Lew; Timothy E. Bogart; Ling Pan; Elizabeth C. Dickey; A. H. Carim; Yanfeng Wang; Marco A. Cabassi; Theresa S. Mayer

doi:10.1117/12.533572

14 June 2004 Synthesis and properties of Si and SiGe/Si nanowires

Joan M. Redwing, Kok-Keong Lew, Timothy E. Bogart, Ling Pan, Elizabeth C. Dickey, A. H. Carim, Yanfeng Wang, Marco A. Cabassi, Theresa S. Mayer

Author Affiliations +

Proceedings Volume 5361, Quantum Dots, Nanoparticles, and Nanoclusters; (2004) https://doi.org/10.1117/12.533572
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

The fabrication of semiconductor nanowires, in which composition, size and conductivity can be controlled in both the radial and axial direction of the wire is of interest for fundamental studies of carrier confinement as well as nanoscale device development. In this study, group IV semiconductor nanowires, including Si, Ge and Si_xGe_1-x alloy nanowires were fabricated by vapor-liquid-solid (VLS) growth using gaseous precursors. In the VLS process, gold is used to form a liquid alloy with Si and Ge which, upon supersaturation, precipitates a semiconductor nanowire. Nanoporous alumina membranes were used as templates for the VLS growth process, in order to control the diameter of the nanowires over the range from 45 nm to 200 nm. Intentional p-type and n-type doping was achieved through the addition of either trimethylboron, diborane or phosphine gas during nanowire growth. The electrical properties of undoped and intentionally doped silicon nanowires were characterized using field-assisted assembly to align and position the wires onto pre-patterned test bed structures. The depletion characteristics of back-gated nanowire structures were used to determine conductivity type and qualitatively compare dopant concentration. SiGe and SiGe/Si axial heterostructure nanowires were also prepared through the addition of germane gas during VLS growth. The Ge concentration in the wires was controllable over the range from 12 % to 25% by varying the inlet GeH₄/SiH₄ ratio.

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Joan M. Redwing, Kok-Keong Lew, Timothy E. Bogart, Ling Pan, Elizabeth C. Dickey, A. H. Carim, Yanfeng Wang, Marco A. Cabassi, and Theresa S. Mayer "Synthesis and properties of Si and SiGe/Si nanowires", Proc. SPIE 5361, Quantum Dots, Nanoparticles, and Nanoclusters, (14 June 2004); https://doi.org/10.1117/12.533572

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