16 June 2004 3.0-mW GaInNAs long-wavelength vertical-cavity surface-emitting laser grown by metalorganic chemical vapor deposition
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Abstract
We have optimized the doping levels in distributed Bragg reflectors (DBRs) and GaInNAs/GaAs quantum well (QW) structures in order to enhance their optical output power. We achieved high output power GaInNAs vertical-cavity surface-emitting lasers (VCSELs) emitting at 1260nm. The continuous wave (CW) output power of the devices reached 3.0mW at room temperature, with a slope efficiency of 0.28W/A. The devices consisted of conventional n-type and ptype doped DBRs with GaInNAs/GaAs 3QWs, and they were grown by metalorganic chemical vapor deposition (MOCVD).
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Tetsuo Nishida, Mitsuru Takaya, Satoshi Kakinuma, Takeo Kaneko, Tatsuya Shimoda, "3.0-mW GaInNAs long-wavelength vertical-cavity surface-emitting laser grown by metalorganic chemical vapor deposition", Proc. SPIE 5364, Vertical-Cavity Surface-Emitting Lasers VIII, (16 June 2004); doi: 10.1117/12.528771; https://doi.org/10.1117/12.528771
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