16 June 2004 Improvement of high-speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
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Abstract
We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ~0.4 mA, and slope efficiencies ~ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ~30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.
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Y. S. Chang, Y. S. Chang, Hao-chung Kuo, Hao-chung Kuo, Fang-I Lai, Fang-I Lai, Y. A. Chang, Y. A. Chang, Li-Hong Laih, Li-Hong Laih, S. C. Wang, S. C. Wang, } "Improvement of high-speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs", Proc. SPIE 5364, Vertical-Cavity Surface-Emitting Lasers VIII, (16 June 2004); doi: 10.1117/12.530055; https://doi.org/10.1117/12.530055
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