16 June 2004 Long-wavelength VCSELs with InP/air-gap DBRs
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Abstract
We demonstrate novel electrically pumped 1300 nm and 1550 nm VCSELs with two InP/air-gap DBRs. The active regions comprise conventional InGaAsP multiple quantum wells. A tunnel junction is placed between the active region and top DBR to convert electrons into holes, thus minimizing the use of p-type material in the structure to reduce the free-carrier loss and achieve current confinement. The whole structure was grown in a single growth run by low pressure MOCVD. For both 1300 and 1550 nm emission wavelengths, air-gap DBR VCSELs exhibit roomtemperature, CW threshold current density as low as 1.1 kA/cm2, differential quantum efficiency greater than 30%, and CW operation up to 85°C. The single-mode output power was 1.6 mW from a 1300 nm VCSEL with a 6.3 μm aperture; and 1.1 mW from a 1550 nm VCSEL with a 5.7 μm aperture under room temperature CW operation
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Chao-Kun Lin, Chao-Kun Lin, David P. Bour, David P. Bour, Jintian Zhu, Jintian Zhu, William H. Perez, William H. Perez, Michael H. Leary, Michael H. Leary, Ashish Tandon, Ashish Tandon, Scott W. Corzine, Scott W. Corzine, Michael R. T. Tan, Michael R. T. Tan, } "Long-wavelength VCSELs with InP/air-gap DBRs", Proc. SPIE 5364, Vertical-Cavity Surface-Emitting Lasers VIII, (16 June 2004); doi: 10.1117/12.538327; https://doi.org/10.1117/12.538327
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