16 June 2004 Optically pumped VECSEL operating at 1550 nm
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Abstract
We present the design and characteristics of an optically pumped vertical external cavity surface emitting laser emitting near 1550 nm. The InP-based laser was grown by Metalorganic vapor-phase epitaxy including an InGaAsP gain element and an InP/InGaAsP mirror. The gain element comprises 20 strain compensated quantum wells on top of a distributed Bragg reflector. As an external mirror we used a concave spherical mirror, which also provides the outcoupling of light. Gain is achieved by optical pumping with a high power, 1250 nm fiber Raman laser focused on the gain chip. Essential for achieving high output power is to reduce the temperature of the gain material and this is accomplished by bonding an intra-cavity silicon heat spreader to the surface of the gain element. The maximum output power is 260 mW at multi transverse mode operation and 230 mW at single transverse mode operation with a near Gaussian beam profile (M2=1.22) at 240 K. At room temperature the output power was limited to 12 mW. The maximum output power greatly depends on the operating temperature and studies of pump induced thermal effects show that thermal lensing imposes limitations on the attainable power.
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Hans H. Lindberg, Martin Strassner, Joergen Bengtsson, Anders Larsson, "Optically pumped VECSEL operating at 1550 nm", Proc. SPIE 5364, Vertical-Cavity Surface-Emitting Lasers VIII, (16 June 2004); doi: 10.1117/12.526729; https://doi.org/10.1117/12.526729
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