Translator Disclaimer
11 May 2004 Angled broad-area semiconductor lasers to emit high output power with good beam quality
Author Affiliations +
Abstract
A new type of laser diodes with good beam quality is introduced. The far-field divergence angle can be close to diffraction-limited value. In the new design, the direction of the waveguide on a broad area Fabry-Perot laser diode is tilted at an angle from the facet normal. This design is called “angled broad area laser diode”. In this tilted waveguide device, filamentation is not observed. The far-field divergence angle is generally within 5 times the diffraction-limited value. This tilted broad area laser is advantageous over the angled grating DFB laser because the difficulty of matching the grating period with peak gain wavelength is avoided.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi-Shin Su, Chih-Hung Tsai, Chia-Wei Tsai, Din Ping Tsai, and Ching-Fuh Lin "Angled broad-area semiconductor lasers to emit high output power with good beam quality", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.525576
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top