11 May 2004 Dual-wavelength semiconductor laser with 191-nm mode spacing
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Abstract
A very wide tuning range of dual-wavelength semiconductor lasers with properly designed nonidentical InGaAsP quantum wells is reported. By well aligning the external cavity, the dual-wavelength operation can be achieved with a record wavelength separation about 191 nm (27.4 THz) at 22.7°C. The wide separation of two wavelengths is possible due to a proper modification of the external-cavity configuration and reduced gain competition of laser modes.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Chia Huang, Ching-Fuh Lin, "Dual-wavelength semiconductor laser with 191-nm mode spacing", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.525582; https://doi.org/10.1117/12.525582
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