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11 May 2004 High-power ultra-fast single- and multi-mode quantum dot lasers with superior beam profile
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Universal self-organisation on surfaces of semiconductors upon deposition of a few non-lattice-matched monolayers using MOCVD or MBE lead to the formation of quantum dots. Their electronic and optical properties are closer to those of atoms than of solids. We have demonstrated for QD-lasers a record low transparency current density of 6A/cm2 per dot layer at 1.16 μm, high-power of 12W, an internal quantum efficiency of 98%, and an internal loss below 1.5 cm-1. Relaxation oscillations indicate the potential for cut-off frequencies larger than 10 GHz. GaAs-based QD-lasers emitting at 1.3 μm exhibit output power of 5 W and single transverse mode operation up to 300 mW. At 1.5 μm again an output power of 5 W has been obtained for first devices showing a transparency current of 700 A/cm2. Single mode lasers at 1.16 and 1.3 μm show no beam filamentation, reduced M2, sensitivity to optical feedback by 30 db and α-parameter as compared to quantum well lasers. Passive mode locking of 1.3 μm lasers up to 20 GHz is obtained. Thus GaAs-lasers can now replace InP-based ones at least in the range up to 1.3 µm, probably up to 1.55 μm.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

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