11 May 2004 Low-divergence-angle 808-nm GaAlAs/GaAs laser diode using an asymmetric-cladding structure
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Abstract
We present a single-mode, 808 nm, AlInGaAs/AlGaAs/GaAs, strained, quantum-well laser with a record low, vertical divergence-angle of 12 degrees and high slope-efficiency of 1.0 W/A. Epitaxial-up mounted devices have operated with no measurable degradation at 150 mW, 50°C for 3500 hours.
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Zuntu Xu, Zuntu Xu, Wei Gao, Wei Gao, Brad Siskavich, Brad Siskavich, Alan Nelson, Alan Nelson, Lisen Cheng, Lisen Cheng, Kejian Luo, Kejian Luo, Hyo Sang Kim, Hyo Sang Kim, Zhiping Wang, Zhiping Wang, Aland K. Chin, Aland K. Chin, } "Low-divergence-angle 808-nm GaAlAs/GaAs laser diode using an asymmetric-cladding structure", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.528329; https://doi.org/10.1117/12.528329
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