11 May 2004 Over 100-mW blue-violet laser diodes for Blu-ray Disc system
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400-nm-band GaN-based blue-violet laser diodes (LDs) operating with a high output power of over 100 mW have been successfully fabricated. A new ridge structure, in which the outside of the ridge was covered with a stacked layer of Si on SiO2 and the ridge width was as narrow as 1.4 μm, was applied to realize the stable lateral-mode operation. A layer structure around the active layer was carefully designed so as to ensure a high COD level. The lasers have been operated stably for more than 500 h under 130-mW pulsed operation at 60°C. From ambient temperature dependence of the device lifetime, the empirical activation energy was estimated as 0.32 eV. These results indicate that this LD is suitable for next-generation Blu-ray Disc system.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeharu Asano, Takeharu Asano, Motonubu Takeya, Motonubu Takeya, Takashi Mizuno, Takashi Mizuno, Shinro Ikeda, Shinro Ikeda, Yoshio Ohfuji, Yoshio Ohfuji, Tsuyoshi Fujimoto, Tsuyoshi Fujimoto, Kenji Oikawa, Kenji Oikawa, Shu Goto, Shu Goto, Toshihiro Hashizu, Toshihiro Hashizu, Keigo Aga, Keigo Aga, Masao Ikeda, Masao Ikeda, } "Over 100-mW blue-violet laser diodes for Blu-ray Disc system", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.533187; https://doi.org/10.1117/12.533187

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