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11 May 2004 Thermal annealing effect on InGaAsN/GaAs lasers
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Abstract
Before processing the InGaAsN/GaAs edge emitting lasers, post-growth rapid thermal annealing (RTA) was applied on the wafer. Different RTA results in different threshold current density (Jth). RTA at 720°C reduces the Jth significantly but keeps the linear fit slope of Jth vs 1/L (L is the cavity length). It indicates that RTA at 720°C can decrease the absorption losses. High temperature RTA at 890°C can dramatically decrease the linear fit slope, which indicates that the carrier conductivity is improved dramatically even the RTA time is only one second.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Changsi Peng, Janne Konttinen, Suvi Karirinne, Tomi Jouhti, Hongfei Liu, and Markus Pessa "Thermal annealing effect on InGaAsN/GaAs lasers", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.529120
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