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11 May 2004 Thermal annealing effect on InGaAsN/GaAs lasers
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Before processing the InGaAsN/GaAs edge emitting lasers, post-growth rapid thermal annealing (RTA) was applied on the wafer. Different RTA results in different threshold current density (Jth). RTA at 720°C reduces the Jth significantly but keeps the linear fit slope of Jth vs 1/L (L is the cavity length). It indicates that RTA at 720°C can decrease the absorption losses. High temperature RTA at 890°C can dramatically decrease the linear fit slope, which indicates that the carrier conductivity is improved dramatically even the RTA time is only one second.
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Changsi Peng, Janne Konttinen, Suvi Karirinne, Tomi Jouhti, Hongfei Liu, and Markus Pessa "Thermal annealing effect on InGaAsN/GaAs lasers", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004);

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