Benefits of quantum well intermixing in high power diode lasers

Stephen P. Najda; Gianluca Bacchin; Bocang Qiu; Xuefeng Liu; Olek P. Kowalski; Mark Silver; Stewart D. McDougall; Craig J. Hamilton; John H. Marsh

doi:10.1117/12.530263

11 May 2004 Benefits of quantum well intermixing in high power diode lasers

Stephen P. Najda, Gianluca Bacchin, Bocang Qiu, Xuefeng Liu, Olek P. Kowalski, Mark Silver, Stewart D. McDougall, Craig J. Hamilton, John H. Marsh

Author Affiliations +

Proceedings Volume 5365, Novel In-Plane Semiconductor Lasers III; (2004) https://doi.org/10.1117/12.530263
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Quantum well intermixing (QWI) can bring considerable benefits to the reliability and performance of high power laser diodes by intermixing the facet regions of the device to increase the band-gap and hence eliminate absorption, avoiding catastrophic optical damage (COD). The non-absorbing mirror (NAM) regions of the laser cavity can be up to ~20% of the cavity length, giving an additional benefit on cleave tolerances, to fabricate very large element arrays of high power, individually addressable, single mode lasers. As a consequence, large arrays of single mode lasers can bring additional benefits for packaging in terms of hybrization and integration into an optics system. Our QWI techniques have been applied to a range of material systems, including GaAs/AlGaAs, (Al)GaAsP/AlGaAs and InGaAs/GaAs.

Citation Download Citation

Stephen P. Najda, Gianluca Bacchin, Bocang Qiu, Xuefeng Liu, Olek P. Kowalski, Mark Silver, Stewart D. McDougall, Craig J. Hamilton, and John H. Marsh "Benefits of quantum well intermixing in high power diode lasers", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.530263

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