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11 May 2004 Nitride-based in-plane laser diodes with vertical currrent path
Ulrich T. Schwarz, Werner Wegscheider, Alfred Lell, Volker Haerle
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Proceedings Volume 5365, Novel In-Plane Semiconductor Lasers III; (2004) https://doi.org/10.1117/12.529087
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States
Abstract
The realization of group III--nitride laser diodes with a vertical current path on a n-conducting SiC substrate is described. The vertical current path and the possibility of cleaved laser facets result in a simpler process technology. Gain spectra measured by the Hakki-Paoli method show a modulation of the modal gain due to parasitic modes in the SiC substrate. As up to now no defect reduction technique was successfully transfered to GaN on SiC, degradation is the major issue. We discuss the impact of degradation on the gain spectra, facet degradation, and rule out formation of cracks during degradation. We show that the high heat conductivity of SiC may give an advantage with respect to degradation as it results in a only moderate temperature rise of the active region.
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Ulrich T. Schwarz, Werner Wegscheider, Alfred Lell, and Volker Haerle "Nitride-based in-plane laser diodes with vertical currrent path", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.529087
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