PROCEEDINGS VOLUME 5366
INTEGRATED OPTOELECTRONIC DEVICES 2004 | 26-29 JANUARY 2004
Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
INTEGRATED OPTOELECTRONIC DEVICES 2004
26-29 January 2004
San Jose, CA, United States
Resonant Cavity LEDs and Techniques for Enhanced Light Extraction
Proc. SPIE 5366, Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes, 0000 (21 June 2004); https://doi.org/10.1117/12.520571
Proc. SPIE 5366, Si-based resonant cavity light-emitting devices, 0000 (21 June 2004); https://doi.org/10.1117/12.529135
Proc. SPIE 5366, High-performance resonant cavity light-emitting diode for plastic optical fiber application, 0000 (21 June 2004); https://doi.org/10.1117/12.525285
Visible-Spectrum AlInGaP Leds
Proc. SPIE 5366, Light-emitting diodes with integrated omnidirectionally reflective contacts, 0000 (21 June 2004); https://doi.org/10.1117/12.527952
Proc. SPIE 5366, AlGaInP light-emitting diode with metal reflector structure, 0000 (21 June 2004); https://doi.org/10.1117/12.527373
White LEDs for Solid-State Lighting
Proc. SPIE 5366, Highly efficient UV-based conversion LEDs for the generation of saturated colors with improved eye safety, 0000 (21 June 2004); https://doi.org/10.1117/12.530295
Proc. SPIE 5366, Development of solid state light sources based on II-VI semiconductor quantum dots, 0000 (21 June 2004); https://doi.org/10.1117/12.527967
Proc. SPIE 5366, Optimization and performance of AlGaN-based multi-quantum-well deep-UV LEDs, 0000 (21 June 2004); https://doi.org/10.1117/12.529659
Proc. SPIE 5366, Analysis of nitride-based quantum well LEDs and novel white LED design, 0000 (21 June 2004); https://doi.org/10.1117/12.524424
GaN-Based LEDs
Proc. SPIE 5366, Absorption in InGaN-on-sapphire LED structures: comparison between photocurrent measurement method (PMM) and photothermal deflection spectroscopy (PDS), 0000 (21 June 2004); https://doi.org/10.1117/12.528783
Proc. SPIE 5366, Influence of Mg doping profile on the electroluminescence properties of GaInN multiple-quantum-well light-emitting diodes, 0000 (21 June 2004); https://doi.org/10.1117/12.527684
Organic LEDs and Alternative Materials for LEDs
Proc. SPIE 5366, Si-based rare-earth-doped light-emitting devices, 0000 (21 June 2004); https://doi.org/10.1117/12.528989
Proc. SPIE 5366, Materials and structural design of a mid-infrared light-emitting device, 0000 (21 June 2004); https://doi.org/10.1117/12.528899
High-Power LEDs for Illumination
Proc. SPIE 5366, Estimating junction temperature of high-flux white LEDs, 0000 (21 June 2004); https://doi.org/10.1117/12.537628
Proc. SPIE 5366, Beyond the limitations of today's LED packages: optimizing high-brightness LED performance by a comprehensive systems design approach, 0000 (21 June 2004); https://doi.org/10.1117/12.529437
Proc. SPIE 5366, New material options for light-emitting diode packaging, 0000 (21 June 2004); https://doi.org/10.1117/12.529192
Fabrication and Characterization of Advanced LEDs
Proc. SPIE 5366, Investigation of AlGaN buffer layers on sapphire grown by MOVPE, 0000 (21 June 2004); https://doi.org/10.1117/12.529952
Proc. SPIE 5366, Reflectivity fitting for accurate thickness and compositional determination in RCLEDs, 0000 (21 June 2004); https://doi.org/10.1117/12.529654
Proc. SPIE 5366, Scribing of GaN wafer for white LED by water-jet-guided laser, 0000 (21 June 2004); https://doi.org/10.1117/12.529012
Proc. SPIE 5366, High-throughput scribing for the manufacture of LED components, 0000 (21 June 2004); https://doi.org/10.1117/12.531685
Proc. SPIE 5366, Novel LEDs using unique lateral p-n junctions on GaAs (311)A patterned substrates, 0000 (21 June 2004); https://doi.org/10.1117/12.547116
GaN-Based LEDs
Proc. SPIE 5366, 3D simulation and analysis of AlGaN/GaN ultraviolet light-emittings diodes, 0000 (21 June 2004); https://doi.org/10.1117/12.543266
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