21 June 2004 Influence of Mg doping profile on the electroluminescence properties of GaInN multiple-quantum-well light-emitting diodes
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Abstract
The influence of the Mg doping profile on the electroluminescence efficiency of GaInN light emitting diodes (LED) has been investigated. The Mg doping profile is influenced by segregation as well as by diffusion during the growth. The diffusion of the Mg dopants into the active region can be controlled by the growth temperature of the Mg doped layers. An increase in Mg concentration close to the active region results in an improved hole injection and thus in a higher electroluminescence efficiency of the GaInN quantum wells. However an excessive spread of the Mg doping atoms towards the GaInN quantum well active region leads to nonradiative recombination and thus a lower output power of the LEDs. An LED test structure containing multiple quantum wells which differ in In content and emission wavelength was used to probe the spatial distribution of the radiative recombination of electrons and holes in the active region and to clarify the influence of Mg dopants in the active region on nonradiative recombination.
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Thilo Stephan, Klaus Koehler, Manfred Maier, Michael Kunzer, Peter Schlotter, Joachim Wagner, "Influence of Mg doping profile on the electroluminescence properties of GaInN multiple-quantum-well light-emitting diodes", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); doi: 10.1117/12.527684; https://doi.org/10.1117/12.527684
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