21 June 2004 Influence of Mg doping profile on the electroluminescence properties of GaInN multiple-quantum-well light-emitting diodes
Author Affiliations +
Abstract
The influence of the Mg doping profile on the electroluminescence efficiency of GaInN light emitting diodes (LED) has been investigated. The Mg doping profile is influenced by segregation as well as by diffusion during the growth. The diffusion of the Mg dopants into the active region can be controlled by the growth temperature of the Mg doped layers. An increase in Mg concentration close to the active region results in an improved hole injection and thus in a higher electroluminescence efficiency of the GaInN quantum wells. However an excessive spread of the Mg doping atoms towards the GaInN quantum well active region leads to nonradiative recombination and thus a lower output power of the LEDs. An LED test structure containing multiple quantum wells which differ in In content and emission wavelength was used to probe the spatial distribution of the radiative recombination of electrons and holes in the active region and to clarify the influence of Mg dopants in the active region on nonradiative recombination.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thilo Stephan, Thilo Stephan, Klaus Koehler, Klaus Koehler, Manfred Maier, Manfred Maier, Michael Kunzer, Michael Kunzer, Peter Schlotter, Peter Schlotter, Joachim Wagner, Joachim Wagner, } "Influence of Mg doping profile on the electroluminescence properties of GaInN multiple-quantum-well light-emitting diodes", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); doi: 10.1117/12.527684; https://doi.org/10.1117/12.527684
PROCEEDINGS
9 PAGES


SHARE
RELATED CONTENT

Effects of Mg pre flow, memory, and diffusion on the...
Proceedings of SPIE (January 01 1900)
Elimination of resistive losses in large area LEDs by new...
Proceedings of SPIE (February 15 2017)
The effect of Mg and Si impurities on the optical...
Proceedings of SPIE (August 18 2009)
InGaN based high efficiency LED
Proceedings of SPIE (September 13 2007)
GaN-based LEDs grown by molecular beam epitaxy
Proceedings of SPIE (April 06 1998)
Self consistent modeling of resonant PL in InGaN SQW LED...
Proceedings of SPIE (February 12 2007)

Back to Top