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21 June 2004 Novel LEDs using unique lateral p-n junctions on GaAs (311)A patterned substrates
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Abstract
We report the high-density light-emitting diodes (LEDs) using lateral junction for LED printer and other applications. Semi-insulating GaAs (311)A substrates were patterned to create (100) sidewall. GaAs/AlxGa1-xAs epilayers were grown on the patterned substrate using the amphoteric silicon as a dopant, which forms the lateral p-n junction. For the first time, high-density (2400 dots per inch) LED arrays were fabricated using the lateral junction with device width of 10.6 micron. Light emission spectrum shows a single peak at a wavelength of 813 nm with FWHM of 56 nm at room temperature. The same method can be used to fabricate LED arrays with higher device densities for applications in high resolution LED printers, displays and other applications.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nethaji Dharmarasu, Pablo Oscar Vaccaro, Shanmugam Saravanan, Jose Maria Zanardi Ocampo, Kazuyoshi Kubota, and Nobuo Saito "Novel LEDs using unique lateral p-n junctions on GaAs (311)A patterned substrates", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); https://doi.org/10.1117/12.547116
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