21 June 2004 Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
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Abstract
Optical cavity effects have a significant influence on the extraction efficiency of InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes (FCLEDs). Light emitted from the quantum well (QW) self-interferes due to reflection from a closely placed reflective metallic mirror. These interference patterns couple into the escape cone and cause significant changes in the extraction efficiency as the distance between the QW and the metallic mirror varies. In addition, the radiative lifetime of the QW also changes as a function of the distance between the QW and the mirror surface. Experimental results from packaged FCLEDs, supported by optical modeling, show that a QW placed at a neighboring position corresponding to a minimum in overall light extraction. Furthermore, the optical model and experimental data are used to estimate the absolute internal quantum efficiency.
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Yu Chen Shen, Jonathan J. Wierer, Michael R. Krames, Michael J. Ludowise, Mira S. Misra, Farid Ahmed, Andy Y. Kim, Gerd O. Mueller, Jerome C. Bhat, Steve A. Stockman, Paul S. Martin, "Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); doi: 10.1117/12.520571; https://doi.org/10.1117/12.520571
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