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6 May 2004 Multi-element two-dimensional Si pin photodiode array fabricated on a single 30-μm thickness die
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The properties of 32x16 (and 16x16) element pin photodiode arrays with the element size of 1-mm square or smaller and with the gap between the adjacent elements as small as 90 μm are discussed. The arrays were built on a 30-μm thick single Si die. These arrays have superior optical and electrical characteristics by design, and work at zero Volts bias. The arrays are characterized with close to 100% internal quantum efficiency within the spectral range 500-800 nm. The cross talks are smaller than 0.5% within the spectral range 400 to 1000 nm. Very low leakage currents, high shunt resistance-above 5 GΩ at room temperature, low total capacitance, fast rise time, and excellent temperature stability of all parameters-provide for superior performance of such arrays in comparison with those currently used in many fields of medical imaging. The thin silicon die provides superior mechanical flexibility, which, combined with the flip chip packaging technology, allows for its application in extreme mechanical and thermal conditions. The arrays can be tiled facilitating the building of large-scale photodetector matrices. The paper discusses the main features of the structures that create this exceptional array performance.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander O. Goushcha, Andrew J. Popp, Ed Bartley, Richard A. Metzler, and Chris Hicks "Multi-element two-dimensional Si pin photodiode array fabricated on a single 30-μm thickness die", Proc. SPIE 5368, Medical Imaging 2004: Physics of Medical Imaging, (6 May 2004);


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