Submicron Pattern Fabrication By Focused Ion Beams

T. Kato; H. Morimoto; H. Nakata

doi:10.1117/12.947501

20 June 1985 Submicron Pattern Fabrication By Focused Ion Beams

T. Kato, H. Morimoto, H. Nakata

Proceedings Volume 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV; (1985) https://doi.org/10.1117/12.947501
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

In order to develop new generation VLSI devices ( 4 - 16 M Dynamic RAMS ), a submicron fabrication technology is strongly desired. With conventional optical lithography methods, there is a inherent limit of 0.5 - 0.7 μm linewidths. Focused Ion Beam ( FIB ) lithography is expected to emerge in the future because of its many advantages for submicron lithography. Both a submicron Si MOSFET with a high switching speed and a GaAs MESFET with a 0.25 μm gate have been fabricated using FIB lithography technology.

Citation Download Citation

T. Kato, H. Morimoto, and H. Nakata "Submicron Pattern Fabrication By Focused Ion Beams", Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); https://doi.org/10.1117/12.947501

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