20 May 2004 Debris-free low-cost commercial EUV source for at-wavelength metrology
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Proceedings Volume 5374, Emerging Lithographic Technologies VIII; (2004); doi: 10.1117/12.533019
Event: Microlithography 2004, 2004, Santa Clara, California, United States
Abstract
A commercial extreme ultraviolet (EUV) source for at-wavelength metrology is developed. The source concept is based on the transfer of advanced microfocus x-ray tube technology into the EUV spectral range. This concept allows the realization of a compact, debris-free, and long-term stable EUV source. In the EUV tube, silicon targets are used to generate radiation at 13.5 nm. Detailed characteristics of the source performance are reported and different applications of the source in the field of at-wavelength metrology are presented.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andre Egbert, Boris Tkachenko, Stefan Becker, Boris N. Chichkov, "Debris-free low-cost commercial EUV source for at-wavelength metrology", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.533019; https://doi.org/10.1117/12.533019
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KEYWORDS
Extreme ultraviolet

Mirrors

Silicon

Metrology

Semiconducting wafers

Electrons

Spectrographs

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