20 May 2004 Determination of the flare specification and methods to meet the CD control requirements for the 32-nm node using EUVL
Author Affiliations +
Abstract
The minimum gate CD for the 32 nm node is 15 nm and the CD control requirement on the gate CD is < 2.5 nm 3σ. One of the major concerns for meeting these targets using EUV lithography is flare. Flare degrades the aerial image contrast which decreases the process window, and within-die chrome density variation results in local flare variation which worsens the CD control. Since mirror roughness contributes to flare, mirror polishing needs to be improved so that the Mid Spatial Frequency Roughness (MSFR) will be reduced to < 0.14 nm/mirror for 6 mirror imaging systems. In this paper, we will determine the minimum acceptable flare for the 32 nm node to meet the CD target and control requirements using modeling and present methods to meet them as demonstrated by experiments run on the Engineering Test Stand (ETS). Effectiveness of flare mitigation methods using chrome dummification and negative tone resists are quantified, and the capability of Flare Variation Compensation (FVC) to meet CD control targets are verified experimentally.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manish Chandhok, Sang H. Lee, Christof Krautschik, Bryan J. Rice, Eric Panning, Michael Goldstein, Melissa Shell, "Determination of the flare specification and methods to meet the CD control requirements for the 32-nm node using EUVL", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.536024; https://doi.org/10.1117/12.536024
PROCEEDINGS
10 PAGES


SHARE
Back to Top