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20 May 2004 EUV imaging: an aerial image study
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Abstract
This work discusses the imaging properties of EUVL systems on the basis of an aerial image study in resist. A process window analysis for the lithographic structures which are driving the ITRS roadmap is presented. Here we cover the 45 nm and 32 nm node. In a first step we focus on the contribution of wavefront aberrations and flare effects to the imaging performance. In a second step we investigate the process latitude for different generic pattern of the above mentioned nodes. It becomes clear that EUVL tools are a very good choice for the printing of contact holes. Dense and semi-dense lines can be easily printed too, using a conventional illumination setting. From our current perspective, isolated features on bright field reticles are the most challenging structures for EUV imaging due to the flare impact on contrast and process latitude. Related to flare we discuss our progress in mirror surface manufacturing to reduce the overall flare level.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Lowisch, Udo Dinger, Uwe Mickan, and Tilmann Heil "EUV imaging: an aerial image study", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.537338
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