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20 May 2004 EUV resist imaging below 50 nm using coherent spatial filtering techniques
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Abstract
Lithography results using spatially-filtered coherent EUV radiation are presented. These experiments were done using a new 10× Schwarzschild optic and other significant upgrades for high stability and throughput of the system. Included are both single- and multiple-pitch images. A chemically-amplified EUV resist is shown performing at dense 50-nm linewidths and loose 25-nm features. High resolution polymers (HSQ and PMMA) were also tested and demonstrate dense 40-nm linewidths, which are the smallest 1:1 multi-pitch features attempted at this time.
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Michael D. Shumway, Eric L. Snow, Kenneth A. Goldberg, Patrick Naulleau, Heidi Cao, Manish Chandhok, James Alexander Liddle, Erik H. Anderson, and Jeffrey Bokor "EUV resist imaging below 50 nm using coherent spatial filtering techniques", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.535666
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