Translator Disclaimer
Paper
20 May 2004 Experimental study on basic properties of laser-produced EUV plasmas on GEKKO-XII laser facility
Author Affiliations +
Abstract
Extremely ultraviolet (EUV) light at around 13.5 nm of wavelength is the most probable candidate of the light source for lithography for semiconductors of next generation. We have been studying about the EUV light source from laser-produced plasma. Detailed understanding of the EUV plasma is required for developments of modeling with simulation codes. Several parameters should be experimentally measured to develop the important issues in the simulation codes. We focused on density profile, properties of EUV emission, and opacity of the laser-produced plasmas. We present re-cent experimental results on these basic properties of the laser-produced EUV plasmas.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keisuke Shigemori, Mitsuo Nakai, Yoshinori Shimada, Michiteru Yamaura, Kazuhisa Hashimoto, Shinsuke Fujioka, Hiroaki Nishimura, Shigeaki Uchida, Atsushi Sunahara, Katsunobu Nishihara, Noriaki Miyanaga, and Yasukazu Izawa "Experimental study on basic properties of laser-produced EUV plasmas on GEKKO-XII laser facility", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.533918
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top