Fabrication process of molecular memory circuits by nanoimprint lithography

Gun-Young Jung; S. Ganapathiappan; Xuema Li; Dougleas A. A. Ohlberg; Deidre L. Olynick; Yong Chen; Wei Wu; Shih-Yuan Wang; William M. Tong; R. Stanley Williams

doi:10.1117/12.540898

20 May 2004 Fabrication process of molecular memory circuits by nanoimprint lithography

Gun-Young Jung, S. Ganapathiappan, Xuema Li, Dougleas A. A. Ohlberg, Deidre L. Olynick, Yong Chen, Wei Wu, Shih-Yuan Wang, William M. Tong, R. Stanley Williams

Author Affiliations +

Proceedings Volume 5374, Emerging Lithographic Technologies VIII; (2004) https://doi.org/10.1117/12.540898
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

We have utilized the nanoimprint lithography process described this paper to fabricate a rewritable, nonvolatile memory cell with an equivalent density of 6.4 Gbits/cm². The architecture of the circuit was based on an 8x8 crossbar structure with an active molecular layer sandwiched between the top and bottom electrodes. A liftoff process was utilized to produce the top and bottom electrodes, made of Pt/Ti bilayers. The active molecular layer was deposited by the Languir-Blodgett technique. We proposed the use of a new class of nanoimprint resist formulated by dissolving a polymer in its monomer, such as poly(benzyl methacrylate) dissolved in benzyl methacrylate (~8%/92% wt). The new resist enabled us to achieve Pt /Ti lines of 40 nm in width and 130 nm in pitch, as described in this paper. Our overall nanofabrication process has the advantages of relatively low temperature (~70°C) and pressure (~500 psi or 4.5 MPa), both of which are critical to preserving the integrity of the molecular layer.

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Gun-Young Jung, S. Ganapathiappan, Xuema Li, Dougleas A. A. Ohlberg, Deidre L. Olynick, Yong Chen, Wei Wu, Shih-Yuan Wang, William M. Tong, and R. Stanley Williams "Fabrication process of molecular memory circuits by nanoimprint lithography", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.540898

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