20 May 2004 High-throughput EUV reflectometer for EUV mask blanks
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Abstract
A prototype of a reflectometer for masks and mask blanks has been set-up in autumn 2003 for in-house quality check of EUV mask blanks at Schott Lithotec. The target specifications are those under discussion as SEMI standard for EUV mask blank reflectometry. Additionally, the identified demands for semiconductor capital investment for future actinic EUV metrology, high throughputs and small measuring spots, were taken into account for the tool development. Effective use of the emission from a laboratory discharge source is achieved by using polychromatic reflectometry, which has been shown to deliver results about a factor of 100 faster with the same source power and needs less mechanical overhead than a monochromatic reflectometer. The hardware concept, first results and discussion of a test of the performance with respect to resolution, uncertainty and reproducibility will be represented. Jointly with the Physikalisch-Technische Bundesanstalt’s laboratory for radiometry at BESSY II the traceability to storage ring metrology, the calibration and the validation of the concepts will be assessed.
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Rainer Lebert, Rainer Lebert, Christian Wies, Christian Wies, Larissa Juschkin, Larissa Juschkin, Bernhard Jaegle, Bernhard Jaegle, Manfred Meisen, Manfred Meisen, Lutz Aschke, Lutz Aschke, Frank Sobel, Frank Sobel, Holger Seitz, Holger Seitz, Frank Scholze, Frank Scholze, Gerhard Ulm, Gerhard Ulm, Konstantin Walter, Konstantin Walter, Willi Neff, Willi Neff, Klaus Bergmann, Klaus Bergmann, Wolfgang Biel, Wolfgang Biel, } "High-throughput EUV reflectometer for EUV mask blanks", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.537012; https://doi.org/10.1117/12.537012
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