20 May 2004 LEEPL (low-energy electron beam proximity-projection lithography) overlay status
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Abstract
The image placement (IP) error correction is one of the advantages for E-beam lithography tool. LEEPL (Low Energy Electron beam Proximity-projection Lithography) 1,2) which is using stencil mask is able to shift the mask patter image by e-beam angle control. To use this unique technique week point of the stencil mask distortion is compensated. The flexibility of LEEPL E-beam IP correction for over lay is evaluated. The LEEPL E-beam IP correction is done by Sub-Deflector beam control. The feature to improve the over lay accuracy is introduced. It is not only for Mask IP error correction but also for Mask distortion by holding, under layer shot distortion and wafer chucking distortion.
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Norifumi S. Nakajima, Norifumi S. Nakajima, Takuji Atarashi, Takuji Atarashi, Hiroyuki Sakai, Hiroyuki Sakai, Toyoji Fukui, Toyoji Fukui, Hideaki Takano, Hideaki Takano, Daizo Amano, Daizo Amano, "LEEPL (low-energy electron beam proximity-projection lithography) overlay status", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.536229; https://doi.org/10.1117/12.536229
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