Laser plasma EUVL sources: progress and challenges

Martin C. Richardson; Chiew-Seng Koay; Kazutoshi Takenoshita; C. Keyser; S. George; Somsak Teerawattansook; Moza M. Al-Rabban; H. Scott

doi:10.1117/12.541586

20 May 2004 Laser plasma EUVL sources: progress and challenges

Martin C. Richardson, Chiew-Seng Koay, Kazutoshi Takenoshita, C. Keyser, S. George, Somsak Teerawattansook, Moza M. Al-Rabban, H. Scott

Author Affiliations +

Proceedings Volume 5374, Emerging Lithographic Technologies VIII; (2004) https://doi.org/10.1117/12.541586
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The most pressing technical issue for the success of EUV lithography is the provision of a high repetition-rate source having sufficient brightness, lifetime, and with sufficiently low off-band heating and particulate emissions characteristics to be technically and economically viable. We review current laser plasma approaches and achievements, with the objective of projecting future progress and identifying possible limitations and issues requiring further investigation.

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Martin C. Richardson, Chiew-Seng Koay, Kazutoshi Takenoshita, C. Keyser, S. George, Somsak Teerawattansook, Moza M. Al-Rabban, and H. Scott "Laser plasma EUVL sources: progress and challenges", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.541586

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