20 May 2004 Laser plasma EUVL sources: progress and challenges
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Abstract
The most pressing technical issue for the success of EUV lithography is the provision of a high repetition-rate source having sufficient brightness, lifetime, and with sufficiently low off-band heating and particulate emissions characteristics to be technically and economically viable. We review current laser plasma approaches and achievements, with the objective of projecting future progress and identifying possible limitations and issues requiring further investigation.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin C. Richardson, Chiew-Seng Koay, Kazutoshi Takenoshita, C. Keyser, S. George, Somsak Teerawattansook, Moza M. Al-Rabban, and H. Scott "Laser plasma EUVL sources: progress and challenges", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.541586; https://doi.org/10.1117/12.541586
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