20 May 2004 Lateral shearing interferometer for EUVL: theoretical analysis and experiment
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Abstract
We present the theoretical measurement accuracy analysis for at wavelength characterization of the projection lens to be used in extreme-ultraviolet lithography (EUVL) and the first experimental result from the lateral shearing interferometer (LSI) test system. LSI is one of the potential candidates for high Numerical Aperture (NA) optics testing at the EUV region during alignment of the projection optics. To address the problem of multiple-beam interference, we propose a general approach for derivation of a phase-shift algorithm that is able to eliminate the undesired 0th order effect. The main error source effects including shear ratio estimation, hyperbolic calibration, charge coupled device (CCD) size effect, and CCD tilt effect are characterized in detail. The total measurement accuracy of the LSI is estimated to be within 7mλ rms (0.1 nm rms at 13.5 nm wavelength).
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Yucong Zhu, Yucong Zhu, Katsumi Sugisaki, Katsumi Sugisaki, Chidane Ouchi, Chidane Ouchi, Masanobu Hasegawa, Masanobu Hasegawa, Masahito Niibe, Masahito Niibe, Akiyoshi Suzuki, Akiyoshi Suzuki, Katsuhiko Murakami, Katsuhiko Murakami, } "Lateral shearing interferometer for EUVL: theoretical analysis and experiment", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.537331; https://doi.org/10.1117/12.537331
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