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20 May 2004 Performance of a 10-kHz laser-produced-plasma light source for EUV lithography
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Abstract
The main technological challenge of a future extreme ultraviolet (EUV) light source is the required average power of 115W at the intermediate focus. High repetition rate laser produced plasma (LPP) sources are very promising to face this challenge. We report the current status of the laser produced light source system we started to develop in 2002. The system consists of the following main components: The plasma target is a liquid xenon jet with a maximum diameter of 50 micrometer and a velocity of more than 30 m/s. A Nd:YAG laser oscillating at 1064 nm produces the plasma. The laser is a master oscillator power amplifier (MOPA) configuration with a maximum repetition rate of 10 kHz and an average power of 1kW. The EUV system currently delivers an average EUV in-band power of 4 W (2% bandwidth, 2π sr) having a stability of 0.54 % (1σ, 50-pulse moving average). In order to evaluate a further increase of the repetition rate, xenon jet characteristics and EUV plasma images have been investigated at 10 kHz. In addition, a conversion efficiency of 0.67% (2% bw, 2π sr) has been obtained at low repetition rate operation. This paper presents the progress of our LPP light source development.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tamotsu Abe, Takashi Suganuma, Yousuke Imai, Hiroshi Someya, Hideo Hoshino, Masaki Nakano, Georg Soumagne, Hiroshi Komori, Yuichi Takabayashi, Hakaru Mizoguchi, Akira Endo, Koichi Toyoda, and Yasuhiro Horiike "Performance of a 10-kHz laser-produced-plasma light source for EUV lithography", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.536076
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