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20 May 2004 Progress in the ASML EUV program
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ASML has continued to make significant investments in the development of extreme ultraviolet lithography (EUVL), addressing the critical challenges, including defect-free mask handling, reflective optics technology, environmental control, and source. We present updates in these key areas and in the realization of our process development exposure tool. This tool is used to minimize the risk of EUVL for the 45-nm technology node and below, and to support the development of the global infrastructure of masks, sources, and resist. Realization of the process development tool is well underway; most of the modules are in vacuum qualification and functional testing. From arial image simulations, we conclude that EUVL tools are particularly suited for contact printing, due to the use of dark-field masks, and hence, limited influence of flare.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Meiling, Vadim Banine, Peter Kuerz, and Noreen Harned "Progress in the ASML EUV program", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004);


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