14 May 2004 Resist formulation effects on contrast and top-loss as measured by 3D-SEM metrology
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We have implemented 3D-SEM metrology to measure resist height as a function of dose for negative e-beam resists. Converting the resist height to a dissolution rate produces a new way to determine resist contrast. We have used this method to demonstrate improved aspect ratios for a low contrsat resist compared to a high contrast resist. We have also found that increasing the cross-linker concentration causes an increase in the resist dissolution rate and contrast. We have measured this change in contrast using the 3D-SEM technique for three resists systems with varying cross-linker concentration. We have plotted the dissolution rate as a function of e-beam exposure intensity, and used this information to model how contrast effects the final resist profile. Both the model and the experimental data suggest that the higher contrast resist gives a straighter side-wall angle with a negligible effect on the final CD.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew R. Eckert, Andrew R. Eckert, Carl Seiler, Carl Seiler, Robert L. Brainard, Robert L. Brainard, } "Resist formulation effects on contrast and top-loss as measured by 3D-SEM metrology", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (14 May 2004); doi: 10.1117/12.535723; https://doi.org/10.1117/12.535723

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