High-resolution contamination inspection for advanced reticles remains crucial in light of the increasing trend of progressive defects such as crystal growth, haze, fungus, precipitate etc., introduced with DUV lithography, especially for low k1 processes. In most fab environments, routine incoming and re-qualification inspections for photomasks have been implemented. But although this high-resolution inspection provides necessary high-sensitivity, on advanced photomasks it often introduces inspection challenges. Aggressive OPCs and dense primary and secondary geometries are some of the many factors that can result in false-defect problems for the inspection systems. Thus, inspection needs to be desensitized. As an effort to identify a methodology to provide the inspectability while maintaining the necessary high-sensitivity, a characterization has been performed to evaluate a new combination-mode inspection. This technical paper will list the details of this special contamination inspection technique that will allow users to maintain the same high inspection throughput while providing similar or higher resolution inspection for these advanced reticles with superior inspectability.