A new optical technique for monitoring wafer curvature and stress during copper damascene processing

Carol A. Boye; Ronald Carpio; Jennifer Woodring; David M. Owen

doi:10.1117/12.537536

24 May 2004 A new optical technique for monitoring wafer curvature and stress during copper damascene processing

Carol A. Boye, Ronald Carpio, Jennifer Woodring, David M. Owen

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.537536
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Initial characterization of the damascene process was obtained with the new coherent gradient sensing (CGS) interferometer on 200 and 300 mm wafers. The current study represents an extension of earlier work by taking advantage of the greater spatial resolution and data density of the CGS technique relative to more typical non-contact capacitance or laser scanning techniques. The comprehensiveness of the data provides insight into the uniformity of curvature and stress across the wafer. Measurements using the CGS technique were completed at multiple processing steps with principal emphasis being placed upon 300 mm dual damascene processing. It is shown that the greatest changes in wafer stress/topography occur as the wafer progresses through PVD barrier/seed, copper plate, copper anneal, and copper CMP. Of special interest in these studies is the formation of non-visual mechanical defects at a die level scale. Such measurements of valuable wafer properties are useful in not only process development, but also in process monitoring.

Citation Download Citation

Carol A. Boye, Ronald Carpio, Jennifer Woodring, and David M. Owen "A new optical technique for monitoring wafer curvature and stress during copper damascene processing", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.537536

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