Application of scatterometry to shallow trench isolation monitoring

Ian Dudley; Anjan Somadder

doi:10.1117/12.535437

24 May 2004 Application of scatterometry to shallow trench isolation monitoring

Ian Dudley, Anjan Somadder

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.535437
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Measurement of Si trench depth and width critical dimensions (CDs) is an important aspect of shallow trench isolation (STI) process development. The ideal method of measurement is completely non-destructive and has high throughput. However, depth measurement using a Profiler involves contact or potential contact with the wafer surface, is generally not deemed a high throughput solution, and does not provide line width CD information. CD-SEM measurement, on the other hand, provides line width CDs and is faster than using a Profiler, but does not measure trench depth. It can also lead to localized damage and CD variation due to charging effects. Optical Digital Profilometry (ODP), also known as scatterometry, allows for a completely non-destructive, high throughput approach to collecting both CD and depth information. In this paper, we describe the application of ODP for STI process monitoring and compare this approach to older, more firmly entrenched techniques.

Citation Download Citation

Ian Dudley and Anjan Somadder "Application of scatterometry to shallow trench isolation monitoring", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.535437

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