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24 May 2004 Application of spectroscopic ellipsometry-based scatterometry for ultrathin spacer structure
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Abstract
The scatterometry technology has been developed widely in the poly gate and resist patterning application for critical dimension (CD) process control. The advantages of this technology are good precision, short cycle time and multiple information outputs. To extend this application even further on spectroscopic ellipsometry (SE) based scatterometry, the spacer structure application becomes one promising goal. In this work, we use SE based scatterometry to demonstrate a two-dimensional profile of ultra thin spacer with post-etched structure as well as CD measurement of the spacer. A brief theory and measurement results taken by dense and isolate structure will be discussed in this paper. The cross-section of TEM and the spectra fitting by scatterometry are also collected at the same location and compared. It shows a high correlation between the two. Finally, an example of minispacer fault detection methodology and repeatability test on scatterometry is also presented to show the capability for volume production.
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Ryan Chia-Jen Chen, Fang-Cheng Chen, Ying-Ying Luo, Baw-Ching Perng, Yuan-Hung Chiu, and Hun-Jan Tao "Application of spectroscopic ellipsometry-based scatterometry for ultrathin spacer structure", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.557248
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