Arbitrary 3D linewidth form measurement simulations for the next-generation semiconductor circuits by scatterometry using the FDTD method

Hirokimi Shirasaki

doi:10.1117/12.533579

24 May 2004 Arbitrary 3D linewidth form measurement simulations for the next-generation semiconductor circuits by scatterometry using the FDTD method

Hirokimi Shirasaki

Author Affiliations +

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.533579
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

This paper shows basic numerical data for measuring the double periodic linewidths in the complicated LSI circuits using lightwaves. The double periodic areas, containing contact holes, memory arrays, and the mazy and arbitrary line structures are hard to analyze by the RCWA (rigorous coupled wave analysis). Therefore we analyze them using the finite-difference time-domain (FDTD) method. The 3D FDTD analysis is explained in this paper. The refleced electromagnetic waves in the near fields are obtained by the vertical plane wave incidences. The far field solutions are calculated using the numerical integration of the near field currents and the magnetic currents. Then, the scatterometry characteristics can be calculated as a far field by superimposing the scattering electromagnetic fields in a periodic reference surface (a square or rectangular region). Finally, we confirm the FDTD analysis is effective to obtain the reflected light characteristics close to the complicated real photolithographic models.

Citation Download Citation

Hirokimi Shirasaki "Arbitrary 3D linewidth form measurement simulations for the next-generation semiconductor circuits by scatterometry using the FDTD method", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.533579

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