24 May 2004 Belly button reduction using optimized resist filtration method in CMOS gate pattern process
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Abstract
Critical Dimension of gate pattern in CMOS process is the most important parameter for transistor performance and Organic BARC is generally used for controlling gate CD by reducing the substrate reflectivity. After gate etch process, small poly-silicon block defects are formed and those are derived from BARC material. After S/W nitride deposition and etch process the defects become larger and formed block defects of Belly Button type. These “Belly Buttons” are blocking the active area of transistor, make the device characteristic worse and lead to yield loss. To reduce Belly Buttons, we have evaluated various BARC resist filtration methods including new filtration material and smaller size filter in 0.18~0.35 μm CMOS gate pattern process. It was possible to reduce Belly Buttons dramatically using optimized resist filtration method and we finally got the yield up.
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Jeong-Heon Baik, Dong-Jin Lee, Sung-Ho Lee, Sun-Hyung Park, Il-Ho Lee, Jae-Sung Choi, "Belly button reduction using optimized resist filtration method in CMOS gate pattern process", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.533895; https://doi.org/10.1117/12.533895
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