24 May 2004 Height and sidewall angle SEM metrology accuracy
Author Affiliations +
Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004); doi: 10.1117/12.537938
Event: Microlithography 2004, 2004, Santa Clara, California, United States
Downscaling of semiconductor fabrication technology nodes brought forth a need to reassess the accuracy of 3D metrology. Accuracy is defined relative to a reference tool measurement. The authors have studied the accuracy of 3D SEM measurement results for various feature geometries and materials, matching the results to Monte Carlo simulations. Analysis of the SEM images based on an analytical model was performed. Accuracy of 3D algorithm for nominal process window monitoring is shown.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roman Kris, Ofer Adan, Aviram Tam, Albert Yu. Karabekov, Ovadya Menadeva, Ram Peltinov, Ayelet Pnueli, Oren Zoran, Arcadiy Vilenkin, "Height and sidewall angle SEM metrology accuracy", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.537938; https://doi.org/10.1117/12.537938

Scanning electron microscopy

3D metrology


3D modeling


Monte Carlo methods

Optical lithography

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