Qualification of a low-cost high-quality reticle process for 90-nm contact layers

Kirk J. Strozewski; Joe Perez; Rusty Carter; Robert Kiefer; Curt Jackson; Susan MacDonald; Franklin Kalk

doi:10.1117/12.536712

24 May 2004 Qualification of a low-cost high-quality reticle process for 90-nm contact layers

Kirk J. Strozewski, Joe Perez, Rusty Carter, Robert Kiefer, Curt Jackson, Susan MacDonald, Franklin Kalk

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.536712
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Reticle costs are increasing as users tighten specifications to accommodate the shrinking process windows in advanced semiconductor lithography. Tighter specs often drive the use of e-beam based mask processes, which produce better mask pattern acuity than laser-based tools but suffer lower throughput (and thus higher costs). In some cases, such as contacts, the pattern acuity of an e-beam tool does not seem to be required -- but the tight effective CD uniformity typically produced by an e-beam mask writer is still necessary to prevent wafer level defect problems. This presents problems for the maskshop (e.g., low yield and long cycle time) as well as for the fab (more expensive new product introduction, uncertainty in mask delivery). This paper describes the results of qualifying a low cost, high quality mask making process for 90nm wafer production. The process uses a DUV laser-based mask writer to achieve low cost. Wafer photolithography process results using two masks fabricated with different mask making processes are presented, along with comparative electrical performance.

Citation Download Citation

Kirk J. Strozewski, Joe Perez, Rusty Carter, Robert Kiefer, Curt Jackson, Susan MacDonald, and Franklin Kalk "Qualification of a low-cost high-quality reticle process for 90-nm contact layers", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.536712

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